Phase-change memory devices based on gallium-doped indium oxide
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 94 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Wang, S. -L. | en_US |
| dc.contributor.author | Chen, C. -Y. | en_US |
| dc.contributor.author | Hsieh, M. -K. | en_US |
| dc.contributor.author | Lee, W. -C. | en_US |
| dc.contributor.author | Kung, A. H. | en_US |
| dc.contributor.author | Peng, L. -H. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:09:46Z | |
| dc.date.available | 2014-12-08T15:09:46Z | |
| dc.date.issued | 2009-03-16 | en_US |
| dc.description.abstract | We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of similar to 250 degrees C with an activation energy of 1.27 +/- 0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In(2)O(3). We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO. | en_US |
| dc.identifier.doi | 10.1063/1.3089238 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3089238 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7475 | |
| dc.identifier.wosnumber | WOS:000264380300080 | |
| dc.language.iso | en_US | en_US |
| dc.subject | crystallisation | en_US |
| dc.subject | gallium | en_US |
| dc.subject | indium compounds | en_US |
| dc.subject | phase change memories | en_US |
| dc.subject | solid-state phase transformations | en_US |
| dc.title | Phase-change memory devices based on gallium-doped indium oxide | en_US |
| dc.type | Article | en_US |