Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2)
| dc.citation.epage | 98 | en_US |
| dc.citation.spage | 96 | en_US |
| dc.citation.volume | 137 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Shih, Yi-Sen | en_US |
| dc.contributor.author | Lin, Pei-Yin | en_US |
| dc.contributor.author | Chen, Jr-Yu | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-07-21T11:21:00Z | |
| dc.date.available | 2015-07-21T11:21:00Z | |
| dc.date.issued | 2014-12-15 | en_US |
| dc.description.abstract | On semipolar GaN(1 1 (2) over bar 2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(1 1 (2) over bar 2)//GaN(1 1 (2) over bar 2) and [(1) over bar 1 0 0](ZnO)//[(1) over bar 1 0 0](GaN) which is expected for ZnO growth on GaN(1 1 (2) over bar 2), while the other is a newly found relationship of ZnO((1) over bar 0 1 (1) over bar)//GaN(0 0 0 2) and [5 (7) over bar 2 (3) over bar](ZnO)//[(1) over bar 1 0 0](GaN). (C) 2014 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.matlet.2014.08.132 | en_US |
| dc.identifier.issn | 0167-577X | en_US |
| dc.identifier.journal | MATERIALS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.matlet.2014.08.132 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/123860 | |
| dc.identifier.wosnumber | WOS:000345469700026 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Electron microscopy | en_US |
| dc.subject | X-ray techniques | en_US |
| dc.subject | Thin films | en_US |
| dc.title | Growth orientations of semipolar ZnO on GaN(1 1 (2)over-bar 2) | en_US |
| dc.type | Article | en_US |