NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS
| dc.citation.epage | 1570 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1564 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | LO, SH | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:51Z | |
| dc.date.available | 2014-12-08T15:04:51Z | |
| dc.date.issued | 1992-07-01 | en_US |
| dc.description.abstract | The photoeffects on the I-V characteristics of GaAs MESFET's have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field in the gate depletion region, where a large gradient in the depth profile of the hole Fermi energy is found. For devices with a lightly doped n-type buffer layer, the increase of the drain current is less than for devices without a buffer layer, but is still substantial. | en_US |
| dc.identifier.doi | 10.1109/16.141220 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.141220 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3361 | |
| dc.identifier.wosnumber | WOS:A1992HZ82300004 | |
| dc.language.iso | en_US | en_US |
| dc.title | NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS | en_US |
| dc.type | Article | en_US |