AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR
| dc.citation.epage | 419 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 414 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:06:28Z | |
| dc.date.available | 2014-12-08T15:06:28Z | |
| dc.date.issued | 1980 | en_US |
| dc.identifier.doi | 10.1109/T-ED.1980.19877 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/T-ED.1980.19877 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5048 | |
| dc.identifier.wosnumber | WOS:A1980JM12500016 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR | en_US |
| dc.type | Article | en_US |