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Space- and Time-Resolved Mapping of Ionic Dynamic and Electroresistive Phenomena in Lateral Devices

dc.citation.epage6815en_US
dc.citation.issue8en_US
dc.citation.spage6806en_US
dc.citation.volume7en_US
dc.citation.woscount3
dc.contributor.authorStrelcov, Evghenien_US
dc.contributor.authorJesse, Stephenen_US
dc.contributor.authorHuang, Yen-Linen_US
dc.contributor.authorTeng, Yung-Chunen_US
dc.contributor.authorKravchenko, Ivan I.en_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:31:56Z
dc.date.available2014-12-08T15:31:56Z
dc.date.issued2013-08-01en_US
dc.description.abstractA scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.en_US
dc.identifier.doi10.1021/nn4017873en_US
dc.identifier.issn1936-0851en_US
dc.identifier.journalACS NANOen_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn4017873en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22568
dc.identifier.wosnumberWOS:000323810600039
dc.language.isoen_USen_US
dc.subjectKPFMen_US
dc.subjectionic dynamicsen_US
dc.subjectCa-BFOen_US
dc.subjectsurface potential distributionen_US
dc.subjectoxygen vacancyen_US
dc.titleSpace- and Time-Resolved Mapping of Ionic Dynamic and Electroresistive Phenomena in Lateral Devicesen_US
dc.typeArticleen_US

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