A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTOR
| dc.citation.epage | 82 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 81 | en_US |
| dc.citation.volume | 1 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | SHENG, HD | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:06:30Z | |
| dc.date.available | 2014-12-08T15:06:30Z | |
| dc.date.issued | 1980 | en_US |
| dc.identifier.issn | 0193-8576 | en_US |
| dc.identifier.journal | ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5063 | |
| dc.identifier.wosnumber | WOS:A1980JS29100006 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW PHOTO-SENSITIVE VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE-RESISTANCE DEVICE - THE LAMBDA-BIPOLAR PHOTO-TRANSISTOR | en_US |
| dc.type | Article | en_US |
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