In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP
| dc.citation.epage | 159 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 157 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Liao, CC | en_US |
| dc.contributor.author | Tsai, C | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:53Z | |
| dc.date.available | 2014-12-08T15:01:53Z | |
| dc.date.issued | 1997-04-01 | en_US |
| dc.description.abstract | The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer. | en_US |
| dc.identifier.doi | 10.1109/55.563314 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.563314 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/633 | |
| dc.identifier.wosnumber | WOS:A1997WN76400010 | |
| dc.language.iso | en_US | en_US |
| dc.title | In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP | en_US |
| dc.type | Article | en_US |