Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells
| dc.contributor.author | Wang, C. H. | en_US |
| dc.contributor.author | Chang, W. T. | en_US |
| dc.contributor.author | Chang, S. P. | en_US |
| dc.contributor.author | Li, J. C. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:05Z | |
| dc.date.available | 2014-12-08T15:21:05Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved. (C) 2010 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-55752-910-7 | en_US |
| dc.identifier.journal | 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/14993 | |
| dc.identifier.wosnumber | WOS:000295612402159 | |
| dc.language.iso | en_US | en_US |
| dc.title | Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells | en_US |
| dc.type | Proceedings Paper | en_US |
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