Pillar Height Dependence of Field-Emission Properties in an Array of Carbon Nanotube Pillars

dc.citation.epageen_US
dc.citation.issue8en_US
dc.citation.volume52en_US
dc.citation.woscount3
dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorJuan, Chuan-Pingen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:31:02Z
dc.date.available2014-12-08T15:31:02Z
dc.date.issued2013-08-01en_US
dc.description.abstractCarbon nanotube pillars with optimal field-emission properties, including a high field enhancement factor beta of 5384 and a low turn-on field E-to of 0.84 V/mu m, have been achieved when the ratio of interpillar spacing to pillar height is 2. However, when this ratio exceeds 2, the field enhancement factor increases with increasing pillar height since the field can be enhanced by increasing the aspect ratio. When the ratio is smaller than 2, the field enhancement factor decreases with increasing pillar height owing to the increased field-screening effect. A simulation has been performed to verify the experimental results. (C) 2013 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.7567/JJAP.52.085101en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.52.085101en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22126
dc.identifier.wosnumberWOS:000322454500018
dc.language.isoen_USen_US
dc.titlePillar Height Dependence of Field-Emission Properties in an Array of Carbon Nanotube Pillarsen_US
dc.typeArticleen_US

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