Electrical enhancement of poly-Si TFTs using FSG ILD passivation

Abstract

Polycrystalline silicon thin-film transistors (poly-Si TFTs) with fluorinated silicate glass (FSG) inter-layer dielectric (ILD) passivation layer were proposed in this study. The outdiffused fluorine atoms from FSG ILD could replace Si dangling bonds at grain boundaries in poly-Si film. The proposed short-channel poly-Si TFTs with FSG ILD passivation have electrical enhancement, including on current, off current, and kink effect, compared to those with undoped SiO2 ILD passivation.