標題: | Electrical enhancement of poly-Si TFTs using FSG ILD passivation |
作者: | Huang, Jiun-Jia Chang, Chia-Wen Dneg, Chih-Kang Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2007 |
摘要: | Polycrystalline silicon thin-film transistors (poly-Si TFTs) with fluorinated silicate glass (FSG) inter-layer dielectric (ILD) passivation layer were proposed in this study. The outdiffused fluorine atoms from FSG ILD could replace Si dangling bonds at grain boundaries in poly-Si film. The proposed short-channel poly-Si TFTs with FSG ILD passivation have electrical enhancement, including on current, off current, and kink effect, compared to those with undoped SiO2 ILD passivation. |
URI: | http://hdl.handle.net/11536/9556 |
期刊: | IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 |
起始頁: | 1881 |
結束頁: | 1884 |
顯示於類別: | 會議論文 |