標題: Electrical enhancement of poly-Si TFTs using FSG ILD passivation
作者: Huang, Jiun-Jia
Chang, Chia-Wen
Dneg, Chih-Kang
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: Polycrystalline silicon thin-film transistors (poly-Si TFTs) with fluorinated silicate glass (FSG) inter-layer dielectric (ILD) passivation layer were proposed in this study. The outdiffused fluorine atoms from FSG ILD could replace Si dangling bonds at grain boundaries in poly-Si film. The proposed short-channel poly-Si TFTs with FSG ILD passivation have electrical enhancement, including on current, off current, and kink effect, compared to those with undoped SiO2 ILD passivation.
URI: http://hdl.handle.net/11536/9556
期刊: IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁: 1881
結束頁: 1884
顯示於類別:會議論文