Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

標題:	Enhanced performance and reliability of NILC-TFTs using FSG buffer layer
作者:	Chen, Chien-Chih Wu, YewChung Sermon Chang, Chih-Pang 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	Fluorinated-silicate-glass (FSG);Polycrystalline silicon thin-film transistors;(poly-Si TFTs);Ni-metal-induced lateral crystallization;(NILC)
公開日期:	15-二月-2012
摘要:	A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.matchemphys.2011.11.080 http://hdl.handle.net/11536/15629
ISSN:	0254-0584
DOI:	10.1016/j.matchemphys.2011.11.080
期刊:	MATERIALS CHEMISTRY AND PHYSICS
Volume:	132
Issue:	2-3
起始頁:	637
結束頁:	640
顯示於類別：	期刊論文

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