Using Fluorine-ion Implanted a-Si Layer to Reduce Ni Contamination and Passivate the Defects in NILC poly-Si

Abstract

The grain boundaries which included dangling bonds in Ni-metal-induced lateral crystallization (NILC) poly-Si TFT would trap Ni and NiSi2 precipitates. This phenomenon resulted in threshold voltage shifting and lower field-effect mobility. To resolve this issue, the a-Si layer with fluorine-ion implanted was used as gettering layer to reduce Ni contamination and passivate the dangling bonds in the active layer. It was found that the F-G layer could not only reduce the Ni contamination but also passivate the defects in NILC poly-Si.