Improving the electrical properties of NILC poly-Si films using a gettering substrate

標題:	Improving the electrical properties of NILC poly-Si films using a gettering substrate
作者:	Hu, Chen-Ming Wu, YewChung Sermon Lin, Chi-Ching 材料科學與工程學系 Department of Materials Science and Engineering
關鍵字:	gettering;Ni-metal-induced lateral crystallization (NILC);thin-film transistors (TFTs)
公開日期:	1-十一月-2007
摘要:	Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (a-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, current crystallization technology often leads to Ni and NiSi2 precipitates being trapped, thus degrading the performance of the device. We proposed using a-Si-coated wafers as Ni-gettering substrates. After bonding the gettering substrate with the NILC poly-Si film both the Ni-metal impurity within the NILC poly-Si film and the leakage current were greatly reduced, thus increasing the ON/OFF current ratio.
URI:	http://dx.doi.org/10.1109/LED.2007.907267 http://hdl.handle.net/11536/10175
ISSN:	0741-3106
DOI:	10.1109/LED.2007.907267
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	11
起始頁:	1000
結束頁:	1003
顯示於類別：	期刊論文

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