Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

doi:10.1016/j.matchemphys.2011.11.080

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Chien-Chih	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Chang, Chih-Pang	en_US
dc.date.accessioned	2014-12-08T15:22:00Z	-
dc.date.available	2014-12-08T15:22:00Z	-
dc.date.issued	2012-02-15	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.matchemphys.2011.11.080	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15629	-
dc.description.abstract	A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Fluorinated-silicate-glass (FSG)	en_US
dc.subject	Polycrystalline silicon thin-film transistors	en_US
dc.subject	(poly-Si TFTs)	en_US
dc.subject	Ni-metal-induced lateral crystallization	en_US
dc.subject	(NILC)	en_US
dc.title	Enhanced performance and reliability of NILC-TFTs using FSG buffer layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.matchemphys.2011.11.080	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	132	en_US
dc.citation.issue	2-3	en_US
dc.citation.spage	637	en_US
dc.citation.epage	640	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000301083800061	-
dc.citation.woscount	1	-
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