Calibration 90 nm node RF mosfets, including stress degradation
| dc.citation.epage | 607 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 604 | en_US |
| dc.citation.volume | 49 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Kao, H. L. | en_US |
| dc.contributor.author | Kao, C. H. | en_US |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.author | Liao, C. C. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:31Z | |
| dc.date.available | 2014-12-08T15:14:31Z | |
| dc.date.issued | 2007-03-01 | en_US |
| dc.description.abstract | Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.51 dB, at 10 GHZ, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak f(T) of 152 GHz, coinciding with the peak transconductance (g). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress. (c) 2007 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.22209 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.22209 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11051 | |
| dc.identifier.wosnumber | WOS:000244102500035 | |
| dc.language.iso | en_US | en_US |
| dc.subject | NFmin | en_US |
| dc.subject | f(T) | en_US |
| dc.subject | MOSFETs | en_US |
| dc.subject | stress | en_US |
| dc.subject | model | en_US |
| dc.title | Calibration 90 nm node RF mosfets, including stress degradation | en_US |
| dc.type | Article | en_US |