Optical characteristics and microstructure of ZnO quantum dots-SiO2 nanocomposite films prepared by sputtering methods
| dc.citation.epage | en_US | |
| dc.citation.issue | 21 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 30 | |
| dc.contributor.author | Peng, Yu-Yun | en_US |
| dc.contributor.author | Hsieh, Tsung-Eong | en_US |
| dc.contributor.author | Hsu, Chia-Hung | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:15:22Z | |
| dc.date.available | 2014-12-08T15:15:22Z | |
| dc.date.issued | 2006-11-20 | en_US |
| dc.description.abstract | ZnO quantum dots (QDs)-SiO2 nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2-7 nm in amorphous SiO2 matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs-SiO2 nanocomposite films as the fluorescence material in optoelectronic devices. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2387111 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2387111 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11533 | |
| dc.identifier.wosnumber | WOS:000242220000036 | |
| dc.language.iso | en_US | en_US |
| dc.title | Optical characteristics and microstructure of ZnO quantum dots-SiO2 nanocomposite films prepared by sputtering methods | en_US |
| dc.type | Article | en_US |