POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT
| dc.citation.epage | 1145 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1144 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | CHAO, TS | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | YEN, YT | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:52Z | |
| dc.date.available | 2014-12-08T15:04:52Z | |
| dc.date.issued | 1992-06-04 | en_US |
| dc.description.abstract | A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3385 | |
| dc.identifier.wosnumber | WOS:A1992HY58100042 | |
| dc.language.iso | en_US | en_US |
| dc.subject | MEASUREMENT | en_US |
| dc.subject | THIN FILMS | en_US |
| dc.subject | ELLIPOSOMETRY | en_US |
| dc.title | POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT | en_US |
| dc.type | Article | en_US |