A modified HICUM model for GaInP/GaAs HBT devices
| dc.citation.epage | 783 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 780 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tseng, SC | en_US |
| dc.contributor.author | Meng, CC | en_US |
| dc.contributor.author | Chen, WY | en_US |
| dc.contributor.author | Su, JY | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:53Z | |
| dc.date.available | 2014-12-08T15:16:53Z | |
| dc.date.issued | 2006-04-01 | en_US |
| dc.description.abstract | A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (I-C, V-CE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (I-C, V-CE) more precisely. This model has obvious advantages over the VBIC model for showing the relation oj'f, versus bias (I-C, V-CE) in the low and medium current regimes for GaInP/GaAs HBT devices. (c) 2006 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.21474 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.21474 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12406 | |
| dc.identifier.wosnumber | WOS:000236268900047 | |
| dc.language.iso | en_US | en_US |
| dc.subject | transit time | en_US |
| dc.subject | GaInP/GaAs HBT | en_US |
| dc.subject | minority charge | en_US |
| dc.subject | HICUM and VBIC | en_US |
| dc.title | A modified HICUM model for GaInP/GaAs HBT devices | en_US |
| dc.type | Article | en_US |