Effect of thermal annealing on electrical conductivities in arsenic-ion-implanted GaAs

Abstract

The effect of thermal annealing on the electrical conductivities of arsenic-ion-implanted GaAs has been investigated by deep level transient spectroscopy and temperature-dependent conductance measurements. For the annealed films of arsenic-ion-implanted GaAs a band of deep-level defects with the activation energy of around 0.55 eV below the conduction band is found. The dense concentration of traps is able to reduce the carrier concentration from 3 X 10(18) to 2 X 10(17) cm(-3). The cross section of the deep level is calculated to be 1.5 X 10(-14) cm(2). The carrier-transport mechanisms of both as-implanted GaAs and postannealed GaAs are dominantly shown to be a separate hopping and active-type conduction. (C) 1996 American Institute of Physics.