Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains
| dc.citation.epage | 5670 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 5667 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Hou, Chih-Yuan | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:19Z | |
| dc.date.available | 2014-12-08T15:16:19Z | |
| dc.date.issued | 2006-07-01 | en_US |
| dc.description.abstract | Thin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT. | en_US |
| dc.identifier.doi | 10.1143/JJAP.45.5667 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.5667 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12099 | |
| dc.identifier.wosnumber | WOS:000239322400004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | LTPS | en_US |
| dc.subject | poly-Si | en_US |
| dc.subject | imprint | en_US |
| dc.subject | thin-film transistors | en_US |
| dc.subject | Ni-metal-induced lateral crystallization | en_US |
| dc.title | Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains | en_US |
| dc.type | Article | en_US |