Near-resonant high order nonlinear absorption of ZnO thin films
| dc.citation.epage | 19908 | en_US |
| dc.citation.issue | 24 | en_US |
| dc.citation.spage | 19900 | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.woscount | 20 | |
| dc.contributor.author | Chan, Yun-Pei | en_US |
| dc.contributor.author | Lin, Ja-Hon | en_US |
| dc.contributor.author | Hsu, Chih-Chang | en_US |
| dc.contributor.author | Hsieh, Wen-Feng | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:38Z | |
| dc.date.available | 2014-12-08T15:10:38Z | |
| dc.date.issued | 2008-11-24 | en_US |
| dc.description.abstract | Nonlinear optical absorption of ZnO thin film grown by the laser molecular beam epitaxy was investigated by the Z-scan method using a frequency-doubled femtosecond Ti:sapphire laser. Due to near-exciton resonance, an enormous enhancement of two photon absorption (TPA) is about 3000 cm/GW at 390 nm which is about 6.5 times larger than the previously reported at two-photon exciton resonance in near-IR regime and 710 times larger than that of ZnO bulk measured at 532 nm. Besides, the free-carrier absorption resulting from linear absorption and TPA becomes essential when the excitation approaches the exciton resonance. (C) 2008 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.16.019900 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.16.019900 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8138 | |
| dc.identifier.wosnumber | WOS:000261561900051 | |
| dc.language.iso | en_US | en_US |
| dc.title | Near-resonant high order nonlinear absorption of ZnO thin films | en_US |
| dc.type | Article | en_US |