Asymmetries in intrinsic spin-Hall effect in low in-plane magnetic field
| dc.citation.epage | 0 | en_US |
| dc.citation.issue | 15 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 78 | en_US |
| dc.citation.woscount | 5 | en_US |
| dc.contributor.author | Wang, L. Y. | en_US |
| dc.contributor.author | Chu, C. S. | en_US |
| dc.contributor.author | Mal'shukov, A. G. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:42:42Z | |
| dc.date.available | 2019-04-03T06:42:42Z | |
| dc.date.issued | 2008-10-01 | en_US |
| dc.description.abstract | Effects of low in-plane magnetic field on bulk spin densities and edge spin accumulations of a diffusive two-dimensional semiconductor stripe are studied. Focusing upon the Dresselhaus-type intrinsic spin-orbit interaction (SOI), we look for the symmetry, or asymmetry, characteristics in two magnetic-field orientations: along and transverse to the stripe. For longitudinal field, the out-of-plane spin density S(z) exhibits odd parity across the stripe and even parity in the magnetic field and is an edge accumulation. For transverse field, the out-of-plane S(z) becomes asymmetric in both spatial and field dependencies and has finite bulk values for finite magnetic fields. Our results support utilizing low in-plane magnetic fields for the probing of the underlying SOI. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.78.155302 | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.78.155302 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8274 | |
| dc.identifier.wosnumber | WOS:000260574400080 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Asymmetries in intrinsic spin-Hall effect in low in-plane magnetic field | en_US |
| dc.type | Article | en_US |