InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate
| dc.citation.epage | en_US | |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 51 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Yu, Hung Wei | en_US |
| dc.contributor.author | Chung, Chen Chen | en_US |
| dc.contributor.author | Wang, Chin Te | en_US |
| dc.contributor.author | Hong Quan Nguyen | en_US |
| dc.contributor.author | Binh Tinh Tran | en_US |
| dc.contributor.author | Lin, Kung Liang | en_US |
| dc.contributor.author | Dee, Chang Fu | en_US |
| dc.contributor.author | Majlis, Burhanuddin Yeop | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:24Z | |
| dc.date.available | 2014-12-08T15:24:24Z | |
| dc.date.issued | 2012-08-01 | en_US |
| dc.description.abstract | InGaP/GaAs dual-junction solar cells with different tunnel diodes (TDs) grown on misoriented GaAs substrates are investigated. It is demonstrated that the solar cells with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (J(peak)) at higher concentration ratios (185 x) than the solar cells with P++-GaAs/N++-InGaP TDs grown on 6 degrees off GaAs substrates. Furthermore, the cell design with P++-AlGaAs/N++-GaAs TDs grown on 10 degrees off GaAs substrates does not generate a disordered InGaP epitaxial layer during material growth, and thus shows superior current-voltage characteristics. (c) 2012 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.51.080208 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.51.080208 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16928 | |
| dc.identifier.wosnumber | WOS:000307992700009 | |
| dc.language.iso | en_US | en_US |
| dc.title | InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10 degrees off Misoriented GaAs Substrate | en_US |
| dc.type | Article | en_US |