AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES
| dc.citation.epage | 1322 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1311 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 17 | |
| dc.contributor.author | HUANG, GS | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | College of Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:04Z | |
| dc.date.available | 2014-12-08T15:06:04Z | |
| dc.date.issued | 1987-06-01 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4639 | |
| dc.identifier.wosnumber | WOS:A1987H779400012 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES | en_US |
| dc.type | Article | en_US |