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Growth of Semipolar InN(10(1)over-bar3) on LaAlO(3)(112) Substrate

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dc.citation.epageen_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.volume50en_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorTian, Jr-Shengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChang, Lien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:11:47Z
dc.date.available2014-12-08T15:11:47Z
dc.date.issued2011-04-01en_US
dc.description.abstractIn this study, we report the growth and characterization of semipolar (10 (1) over bar3) InN films grown on LaAlO(3)(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465-540 degrees C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (10 (1) over bar3) InN layers can be grown at 510 degrees C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm(2)V(-1)s(-1). (C) 2011 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.1143/JJAP.50.04DH11en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.50.04DH11en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9038
dc.language.isoen_USen_US
dc.titleGrowth of Semipolar InN(10(1)over-bar3) on LaAlO(3)(112) Substrateen_US
dc.typeArticleen_US

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