Influence of cesium vapor on the properties of ITO films deposited by RF magnetron sputtering

dc.citation.epage	761	en_US
dc.citation.spage	759	en_US
dc.contributor.author	Lee, Shih-Nan	en_US
dc.contributor.author	Yan, Ruei-Chih	en_US
dc.contributor.author	Chen, Chin H.	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.date.accessioned	2014-12-08T15:25:31Z
dc.date.available	2014-12-08T15:25:31Z
dc.date.issued	2005	en_US
dc.description.abstract	Indium tin oxide (ITO) thin films were deposited onto polyehtersulfone (PES) substrate at room temperature by negative sputter ion beam technology. The optical and electrical properties of ITO/PES substrates have been improved by introducing the Cs vapor during sputtering. Under our optimal condition, the resistivity of ITO/PES can reach 4.3 x 10(-4) Omega cm, which is lower than 1.6 x 10(-3) Omega cm of the traditional RF sputtered ITO films. The optical transmittance is 85% in visible region and surface morphology of the ITO/PES substrate shows the optimal surface roughness to be 0.95 nm (Ra; 0.74 nm).	en_US
dc.identifier.isbn	978-957-28522-2-4	en_US
dc.identifier.journal	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17925
dc.identifier.wosnumber	WOS:000259399200215
dc.language.iso	en_US	en_US
dc.title	Influence of cesium vapor on the properties of ITO films deposited by RF magnetron sputtering	en_US
dc.type	Proceedings Paper	en_US

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