Influence of cesium vapor on the properties of ITO films deposited by RF magnetron sputtering

Abstract

Indium tin oxide (ITO) thin films were deposited onto polyehtersulfone (PES) substrate at room temperature by negative sputter ion beam technology. The optical and electrical properties of ITO/PES substrates have been improved by introducing the Cs vapor during sputtering. Under our optimal condition, the resistivity of ITO/PES can reach 4.3 x 10(-4) Omega cm, which is lower than 1.6 x 10(-3) Omega cm of the traditional RF sputtered ITO films. The optical transmittance is 85% in visible region and surface morphology of the ITO/PES substrate shows the optimal surface roughness to be 0.95 nm (Ra; 0.74 nm).