Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
| dc.citation.epage | U104 | en_US |
| dc.citation.issue | 25 | en_US |
| dc.citation.spage | 1348 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lu, C. -Y. | en_US |
| dc.contributor.author | Chang, E. Y. | en_US |
| dc.contributor.author | Huang, J. -C. | en_US |
| dc.contributor.author | Chang, C. -T. | en_US |
| dc.contributor.author | Lee, C. -T. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:08:04Z | |
| dc.date.available | 2014-12-08T15:08:04Z | |
| dc.date.issued | 2009-12-03 | en_US |
| dc.description.abstract | An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs. | en_US |
| dc.identifier.doi | 10.1049/el.2009.1643 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el.2009.1643 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6320 | |
| dc.identifier.wosnumber | WOS:000273043100049 | |
| dc.language.iso | en_US | en_US |
| dc.title | Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation | en_US |
| dc.type | Article | en_US |