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TANTALUM SILICIDE SCHOTTKY CONTACTS TO GAAS

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dc.citation.epage645en_US
dc.citation.issue2en_US
dc.citation.spage642en_US
dc.citation.volume65en_US
dc.citation.woscount12
dc.contributor.authorLEE, CPen_US
dc.contributor.authorLIU, THen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorWU, SCen_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.date.accessioned2014-12-08T15:05:53Z
dc.date.available2014-12-08T15:05:53Z
dc.date.issued1989-01-15en_US
dc.identifier.doi10.1063/1.343097en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.343097en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4411
dc.identifier.wosnumberWOS:A1989R720400036
dc.language.isoen_USen_US
dc.titleTANTALUM SILICIDE SCHOTTKY CONTACTS TO GAASen_US
dc.typeArticleen_US

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