Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy
| dc.citation.epage | 537 | en_US |
| dc.citation.issue | 3-4 | en_US |
| dc.citation.spage | 533 | en_US |
| dc.citation.volume | 242 | en_US |
| dc.citation.woscount | 10 | |
| dc.contributor.author | Kuo, MC | en_US |
| dc.contributor.author | Yang, CS | en_US |
| dc.contributor.author | Tseng, PY | en_US |
| dc.contributor.author | Lee, J | en_US |
| dc.contributor.author | Shen, JL | en_US |
| dc.contributor.author | Chou, WC | en_US |
| dc.contributor.author | Shih, YT | en_US |
| dc.contributor.author | Ku, CT | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:14Z | |
| dc.date.available | 2014-12-08T15:42:14Z | |
| dc.date.issued | 2002-07-01 | en_US |
| dc.description.abstract | Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 10(8)/cm(2) and 10(9)/cm(2), respectively. (C) 2002 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0022-0248(02)01421-5 | en_US |
| dc.identifier.issn | 0022-0248 | en_US |
| dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0022-0248(02)01421-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28683 | |
| dc.identifier.wosnumber | WOS:000176873300033 | |
| dc.language.iso | en_US | en_US |
| dc.subject | atomic force microscopy | en_US |
| dc.subject | nanostructures' | en_US |
| dc.subject | molecular beam epitaxy | en_US |
| dc.subject | semiconducting II-VI materials | en_US |
| dc.title | Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy | en_US |
| dc.type | Letter | en_US |