IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION
| dc.citation.epage | 182 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 181 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | CHERN, HN | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:00Z | |
| dc.date.available | 2014-12-08T15:04:00Z | |
| dc.date.issued | 1994-05-01 | en_US |
| dc.description.abstract | The effect of fluorine on the polysilicon oxide (polyoxide) characteristics is investigated. It is found that the polyoxide leakage current and breakdown strength are improved as fluorine is incorporated into the oxide film. Experimental results show that the improvement is believed to be due to the oxide stress relaxation rather than the change of the polyoxide/polysilicon interface texture. | en_US |
| dc.identifier.doi | 10.1109/55.291593 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.291593 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2509 | |
| dc.identifier.wosnumber | WOS:A1994NP23600013 | |
| dc.language.iso | en_US | en_US |
| dc.title | IMPROVEMENT OF POLYSILICON OXIDE CHARACTERISTICS BY FLUORINE INCORPORATION | en_US |
| dc.type | Article | en_US |