2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS
| dc.citation.epage | 401 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 397 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | LO, SH | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:16Z | |
| dc.date.available | 2014-12-08T15:05:16Z | |
| dc.date.issued | 1991-04-01 | en_US |
| dc.description.abstract | A two-dimensional numerical analysis of the drain-current transient behavior of ion-implantation GaAs MESFETs on undoped semi-insulating substrates is presented. It is found that the EL2 traps with slow transient behaviors play an important role in the drain lag effects. Also, the current overshoot and undershoot can be explained by the capture and the emission of electrons through the EL2 traps, respectively. | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3817 | |
| dc.identifier.wosnumber | WOS:A1991FD59600010 | |
| dc.language.iso | en_US | en_US |
| dc.title | 2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS | en_US |
| dc.type | Article | en_US |
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