Alkanethiol-based single-molecule transistors
| dc.citation.epage | en_US | |
| dc.citation.issue | 22 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Ma, Chun-Lan | en_US |
| dc.contributor.author | Nghiem, Diu | en_US |
| dc.contributor.author | Chen, Yu-Chang | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:32Z | |
| dc.date.available | 2014-12-08T15:10:32Z | |
| dc.date.issued | 2008-12-01 | en_US |
| dc.description.abstract | We have investigated the transport properties of alkanethiol molecules in the two-terminal and three-terminal junctions by using first-principles approaches. We observe that states around the Fermi levels are introduced in the amino-substituted butanethiol junction. It leads to a sharp increase in the current, which is credited to the resonant tunneling. The current-voltage characteristics suggest that the amino-substituted butanethiol molecular junction may be a promising candidate for field-effect transistors. | en_US |
| dc.identifier.doi | 10.1063/1.3043438 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3043438 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8054 | |
| dc.identifier.wosnumber | WOS:000261430600043 | |
| dc.language.iso | en_US | en_US |
| dc.subject | ab initio calculations | en_US |
| dc.subject | Fermi level | en_US |
| dc.subject | field effect transistors | en_US |
| dc.subject | organic semiconductors | en_US |
| dc.subject | resonant tunnelling | en_US |
| dc.title | Alkanethiol-based single-molecule transistors | en_US |
| dc.type | Article | en_US |