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A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure

dc.citation.epage1421en_US
dc.citation.issue12en_US
dc.citation.spage1419en_US
dc.citation.volume31en_US
dc.citation.woscount0
dc.contributor.authorChang, Tzu-Yuehen_US
dc.contributor.authorChang, Chun-Lungen_US
dc.contributor.authorLee, Hsin-Yuen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:47:37Z
dc.date.available2014-12-08T15:47:37Z
dc.date.issued2010-12-01en_US
dc.description.abstractA stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage (V(oc)). The measured V(oc) is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm(2)). This V(oc) is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the V(oc) enhancement of MIS solar cells by using a stacking structure.en_US
dc.identifier.doi10.1109/LED.2010.2073437en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2073437en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/31880
dc.identifier.wosnumberWOS:000284541400021
dc.language.isoen_USen_US
dc.subjectMetal-insulator-semiconductor (MIS) solar cellsen_US
dc.subjectopen-circuit voltageen_US
dc.subjectphotovoltaic devicesen_US
dc.subjectstacking solar cellsen_US
dc.titleA Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structureen_US
dc.typeArticleen_US

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