A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS
| dc.citation.epage | 1711 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1709 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 25 | |
| dc.contributor.author | CHUNG, SSS | en_US |
| dc.contributor.author | LEE, JS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:22Z | |
| dc.date.available | 2014-12-08T15:04:22Z | |
| dc.date.issued | 1993-09-01 | en_US |
| dc.description.abstract | A new method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values. | en_US |
| dc.identifier.doi | 10.1109/16.231580 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.231580 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2869 | |
| dc.identifier.wosnumber | WOS:A1993LU39400021 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS | en_US |
| dc.type | Note | en_US |