Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers
| dc.citation.epage | 20154 | en_US |
| dc.citation.issue | 22 | en_US |
| dc.citation.spage | 20149 | en_US |
| dc.citation.volume | 17 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Cheng, Bo-Siao | en_US |
| dc.contributor.author | Liu, Mei-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:30Z | |
| dc.date.available | 2014-12-08T15:08:30Z | |
| dc.date.issued | 2009-10-26 | en_US |
| dc.description.abstract | Temperature dependent gain characteristics and linewidth enhancement factor (alpha-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and analyzed by using the Hakki-Paoli method. The optical gain and differential gain showed a more rapid increase as a function of the injected carriers as temperature decreased. The alpha-factor for the lasing mode was estimated as 2.8 at room temperature and decreased to a value as low as 0.6 at 80 K. (C) 2009 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.17.020149 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.17.020149 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6555 | |
| dc.identifier.wosnumber | WOS:000271629200087 | |
| dc.language.iso | en_US | en_US |
| dc.title | Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers | en_US |
| dc.type | Article | en_US |