Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 14 | en_US |
| dc.citation.volume | 103 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Liao, Yu-An | en_US |
| dc.contributor.author | Chao, Yi-Kai | en_US |
| dc.contributor.author | Chang, Shu-Wei | en_US |
| dc.contributor.author | Chang, Wen-Hao | en_US |
| dc.contributor.author | Chyi, Jen-Inn | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:33:04Z | |
| dc.date.available | 2014-12-08T15:33:04Z | |
| dc.date.issued | 2013-09-30 | en_US |
| dc.description.abstract | We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications. (C) 2013 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4824067 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4824067 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23019 | |
| dc.identifier.wosnumber | WOS:000325488500117 | |
| dc.language.iso | en_US | en_US |
| dc.title | Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots | en_US |
| dc.type | Article | en_US |