THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas
| dc.citation.epage | 3001 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 2996 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 41 | |
| dc.contributor.author | Liu, TA | en_US |
| dc.contributor.author | Tani, M | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:13Z | |
| dc.date.available | 2014-12-08T15:41:13Z | |
| dc.date.issued | 2003-03-01 | en_US |
| dc.description.abstract | We compare the performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs (multi-GaAs:As+) and semi-insulating GaAs. High damage threshold biasing (>60 kV/cm) and large saturation optical-pumping power (similar to20 mW) for multi-GaAs:As+ based PC antennas are reported. Carrier mobility in the As ion implanted layer of GaAs:As+ was estimated to be about 150 cm(2)/V/s, which was comparable to that of. low,temperature GaAs. (C) 2003 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1541105 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1541105 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28037 | |
| dc.identifier.wosnumber | WOS:000181307000109 | |
| dc.language.iso | en_US | en_US |
| dc.title | THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas | en_US |
| dc.type | Article | en_US |