單晶CVD薄膜和熔化成長法製成中之不穩定熱流與使其穩定之研究---子計畫二：薄膜單晶成長之垂直式CVD反應器內流動與熱傳之數值研究 (I)

dc.contributor.author	崔燕勇	en_US
dc.contributor.department	國立交通大學機械工程學系	zh_TW
dc.date.accessioned	2014-12-13T10:38:50Z
dc.date.available	2014-12-13T10:38:50Z
dc.date.issued	1996	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC85-2212-E009-032	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=230694&docId=41961	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/95782
dc.language.iso	zh_TW	en_US
dc.subject	化學蒸汽堆積法	zh_TW
dc.subject	薄膜單晶成長	zh_TW
dc.subject	數值模擬	zh_TW
dc.subject	Chemical vapor deposition	en_US
dc.subject	Thin film single crystal growth	en_US
dc.subject	Numericalsimulation	en_US
dc.title	單晶CVD薄膜和熔化成長法製成中之不穩定熱流與使其穩定之研究---子計畫二：薄膜單晶成長之垂直式CVD反應器內流動與熱傳之數值研究 (I)	zh_TW
dc.title	Numerical Study of Flow and Heat Transfer in Vertical CVD Reactor of Thin Film Single Crystal Growth(I)	en_US
dc.type	Plan	en_US

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