Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current
| dc.citation.epage | 3973 | en_US |
| dc.citation.issue | 24 | en_US |
| dc.citation.spage | 3971 | en_US |
| dc.citation.volume | 79 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Lin, HH | en_US |
| dc.contributor.author | Cheng, SL | en_US |
| dc.contributor.author | Chen, LJ | en_US |
| dc.contributor.author | Chen, C | en_US |
| dc.contributor.author | Tu, KN | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:43:08Z | |
| dc.date.available | 2014-12-08T15:43:08Z | |
| dc.date.issued | 2001-12-10 | en_US |
| dc.description.abstract | Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. (C) 2001 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1423773 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1423773 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29192 | |
| dc.identifier.wosnumber | WOS:000172489100022 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current | en_US |
| dc.type | Article | en_US |