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Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

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dc.citation.issue1en_US
dc.citation.volume56en_US
dc.contributor.authorWei, Yin-Changen_US
dc.contributor.authorLi, Yi-Chiehen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2018-08-21T05:54:01Z
dc.date.available2018-08-21T05:54:01Z
dc.date.issued2017-06-01en_US
dc.description.abstractTypically, each element in a large-area flat-panel X-ray image sensor consists of a photodetector and amorphous silicon (a-Si) thin-film transistor (TFT) switches. In order to reduce noise, increase sensor dynamic range, and increase carrying capacity, the low-temperature polycrystalline-silicon (LTPS) TFTs have been proposed as a candidate to replace the a-Si TFTs. However, there are concerns regarding the impact of X-ray radiation in LTPS-TFTs, and several studies have been conducted to inquire into the same. In this paper, we show that LTPS TFTs with small channel length (<2 mu m) are almost immune to X-ray radiation. (C) 2017 The Japan Society of Applied Physicsen_US
dc.identifier.doi10.7567/JJAP.56.06GF07en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.56.06GF07en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/145481
dc.identifier.wosnumberWOS:000400902300001en_US
dc.language.isoen_USen_US
dc.titleDimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTsen_US
dc.typeArticleen_US

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