Exploiting analogue OxRAM conductance modulation for contrast enhancement application
| dc.citation.epage | 596 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 594 | en_US |
| dc.citation.volume | 56 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Kumar, A. | en_US |
| dc.contributor.author | Bezugam, S. S. | en_US |
| dc.contributor.author | Hudec, B. | en_US |
| dc.contributor.author | Hou, T. -H. | en_US |
| dc.contributor.author | Suri, M. | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2020-10-05T01:59:47Z | |
| dc.date.available | 2020-10-05T01:59:47Z | |
| dc.date.issued | 2020-06-11 | en_US |
| dc.description.abstract | The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states. | en_US |
| dc.identifier.doi | 10.1049/el.2020.0106 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el.2020.0106 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/154917 | |
| dc.identifier.wosnumber | WOS:000541086800006 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | image enhancement | en_US |
| dc.subject | random-access storage | en_US |
| dc.subject | low-contrast images | en_US |
| dc.subject | specific bi-layer OxRAM material stacks | en_US |
| dc.subject | light intensity | en_US |
| dc.subject | resistance encoding | en_US |
| dc.subject | nonvolatile OxRAM resistance states | en_US |
| dc.subject | contrast enhancement application | en_US |
| dc.subject | analogue oxide-based resistive memory device | en_US |
| dc.subject | sensor-level information storage | en_US |
| dc.subject | analogue OxRAM conductance modulation | en_US |
| dc.title | Exploiting analogue OxRAM conductance modulation for contrast enhancement application | en_US |
| dc.type | Article | en_US |
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