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Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films

dc.citation.epage1872en_US
dc.citation.issue4en_US
dc.citation.spage1868en_US
dc.citation.volume92en_US
dc.citation.woscount20
dc.contributor.authorKuo, SYen_US
dc.contributor.authorChen, CSen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorHsieh, WFen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:42:03Z
dc.date.available2014-12-08T15:42:03Z
dc.date.issued2002-08-15en_US
dc.description.abstractWe found the dependence of luminescence efficiency on Er3+ concentration and sintering temperature in the Er-doped Ba0.7Sr0.3TiO3 (BST) thin films is governed by crystallinity and ion-ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700 degreesC, whereas, it becomes worse for temperature above 700 degreesC resulting from phase separation and the Er3+ concentration exceeding 3 mol % due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700 degreesC and 3 mol % Er3+ ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C-V measurement and the Ba0.7Sr0.3TiO3 films doped with Er3+ ions may have potential use for electroluminescence devices. (C) 2002 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.1492870en_US
dc.identifier.issn0021-8979en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1492870en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28578
dc.identifier.wosnumberWOS:000177171700022
dc.language.isoen_USen_US
dc.titleDependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin filmsen_US
dc.typeArticleen_US

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