Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
| dc.citation.epage | 1048 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Hsu, Sheng-Yao | en_US |
| dc.contributor.author | Chen, Hsiao-Yu | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:31Z | |
| dc.date.available | 2014-12-08T15:23:31Z | |
| dc.date.issued | 2012-07-01 | en_US |
| dc.description.abstract | A novel 3-D bonding technology with cosputtered copper and titanium as bonding material is proposed and investigated based on the diffusion mechanism of cosputtered metal during bonding. This technology features a self-formed adhesion layer for Cu metal layers and interconnects. In addition, cosputtered Cu/Ti bonding exhibits good electrical performance as well as high resistance to multiple current stressing. With the advantages of fabrication efficiency and reliable bond quality, cosputtered Cu/Ti bonding technology presents the potential to be applied in 3-D integration. | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16446 | |
| dc.identifier.wosnumber | WOS:000305835300044 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Adhesion layer | en_US |
| dc.subject | metal bonding | en_US |
| dc.subject | 3-D integration | en_US |
| dc.title | Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications | en_US |
| dc.type | Article | en_US |