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Passivation of yellow luminescence defects in GaN film by annealing and CF(4) plasma treatment

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dc.citation.epage975en_US
dc.citation.issue7-8en_US
dc.citation.spage973en_US
dc.citation.volume13en_US
dc.contributor.authorChen, Hsiangen_US
dc.contributor.authorKao, Chyuan-Hauren_US
dc.contributor.authorChen, Yi-Chenen_US
dc.contributor.authorLo, Hong-Kaien_US
dc.contributor.authorYeh, Yih-Minen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorLai, Chao-Sungen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:30:25Z
dc.date.available2014-12-08T15:30:25Z
dc.date.issued2011-07-01en_US
dc.description.abstractIn this study, we demonstrated that yellow luminescence (YL) defects can be mitigated with proper annealing or CF(4) plasma treatment. Multiple material analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and surface roughness measurements were performed to investigate improvements in GaN film material properties caused by annealing and CF(4) plasma treatment. Filling vacancies during the annealing process and incorporating fluorine atoms to bond with dangling bonds during the plasma treatment process may lessen YL defects and decrease YL luminescence.en_US
dc.identifier.issn1454-4164en_US
dc.identifier.journalJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21759
dc.language.isoen_USen_US
dc.titlePassivation of yellow luminescence defects in GaN film by annealing and CF(4) plasma treatmenten_US
dc.typeArticleen_US

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