Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes
| dc.citation.epage | en_US | |
| dc.citation.issue | 3 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 35 | |
| dc.contributor.author | Chang, Y. W. | en_US |
| dc.contributor.author | Liang, S. W. | en_US |
| dc.contributor.author | Chen, Chih | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:11Z | |
| dc.date.available | 2014-12-08T15:16:11Z | |
| dc.date.issued | 2006-07-17 | en_US |
| dc.description.abstract | Kelvin bump probes were fabricated in flip-chip solder joints, and they were employed to monitor the void formation during electromigration. We found that voids started to form at approximately 5% of the failure time under 0.8 A at 150 degrees C, and the bump resistance increased only 0.02 m Omega in the initial stage of void formation. Three-dimensional simulation was performed to examine the increase in bump resistance at different stages of void formation, and it fitted the experimental results quite well. This technique provides a systematic way for investigating the void formation during electromigration. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2226989 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2226989 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12020 | |
| dc.identifier.wosnumber | WOS:000239174100054 | |
| dc.language.iso | en_US | en_US |
| dc.title | Study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes | en_US |
| dc.type | Article | en_US |