The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
| dc.citation.epage | X1 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | X1 | en_US |
| dc.citation.volume | 1 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chang, Kuan-Chang | en_US |
| dc.contributor.author | Tsai, Tsung-Ming | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Syu, Yong-En | en_US |
| dc.contributor.author | Liao, Kuo-Hsiao | en_US |
| dc.contributor.author | Chuang, Siang-Lan | en_US |
| dc.contributor.author | Li, Cheng-Hua | en_US |
| dc.contributor.author | Gan, Der-Shin | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:31Z | |
| dc.date.available | 2014-12-08T15:30:31Z | |
| dc.date.issued | 2012 | en_US |
| dc.identifier.doi | 10.1149/2.022202ssl | en_US |
| dc.identifier.issn | 2162-8742 | en_US |
| dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.022202ssl | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21802 | |
| dc.identifier.wosnumber | WOS:000318339500022 | |
| dc.language.iso | en_US | en_US |
| dc.title | The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012) | en_US |
| dc.type | Correction | en_US |