Optimal design of triple-gate devices for high-performance and low-power applications
| dc.citation.epage | 2428 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 2423 | en_US |
| dc.citation.volume | 55 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chiang, Meng-Hsueh | en_US |
| dc.contributor.author | Lin, Jeng-Nan | en_US |
| dc.contributor.author | Kim, Keunwoo | en_US |
| dc.contributor.author | Chuang, Ching-Te | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:57Z | |
| dc.date.available | 2014-12-08T15:10:57Z | |
| dc.date.issued | 2008-09-01 | en_US |
| dc.description.abstract | Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical (n(+)/p(+)) polysilicon gates. CMOS-compatible V(T)'s for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented. | en_US |
| dc.identifier.doi | 10.1109/TED.2008.927664 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2008.927664 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8391 | |
| dc.identifier.wosnumber | WOS:000258914000018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | corner effects | en_US |
| dc.subject | polysilicon gate | en_US |
| dc.subject | triple-gate (TG) | en_US |
| dc.subject | MOSFETs | en_US |
| dc.title | Optimal design of triple-gate devices for high-performance and low-power applications | en_US |
| dc.type | Article | en_US |