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Improved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Array

dc.citation.epage1443en_US
dc.citation.issue19en_US
dc.citation.spage1441en_US
dc.citation.volume21en_US
dc.citation.woscount2
dc.contributor.authorHuang, Ping-Weien_US
dc.contributor.authorWu, Yew Chung Sermonen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:08:37Z
dc.date.available2014-12-08T15:08:37Z
dc.date.issued2009-10-01en_US
dc.description.abstractA periodic GaP-dish mirror structure was introduced into AlGaInP light-emitting diodes (LEDs) through wet etching and Si wafer bonding process. It was found that the performance of these GaP-dish LEDs was better than that of conventional LED transferred to Si substrate (LED-C). In addition, the output power of GaP-dish LEDs was increased with the decrease of GaP-dish diameter. When the GaP-dish diameter decreased to 3 mu m, the output power reached 2.2 mW, which was two times higher than that of LED-C.en_US
dc.identifier.doi10.1109/LPT.2009.2028238en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2028238en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6616
dc.identifier.wosnumberWOS:000270037200015
dc.language.isoen_USen_US
dc.subjectAlGaInPen_US
dc.subjectdishen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectmirroren_US
dc.titleImproved Performance of AlGaInP LEDs by a Periodic GaP-Dish Mirror Arrayen_US
dc.typeArticleen_US

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